2SC5658 0.15a , 60v npn plastic encapsulated transistor elektronische bauelemente 19-sep-2012 rev.a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free feature low current (max. 150 ma) low voltage (max. 50 v). classification of h fe (1) product-rank 2sc2658-q 2sc2658-r 2sc2658-s range 120~270 180~390 270~560 marking bq br bs absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 7 v collector current - continuous i c 150 ma collector power dissipation p c 100 mw junction, storage temperature t j , t stg 150, -55 ~ 150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 60 - - v i c =50 a, i e =0 collector to emitter breakdown voltage v (br)ceo 50 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 7 - - v i e =50 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb =60v, i e =0 emitter cut-off current i ebo - - 0.1 a v eb =7v, i c =0 dc current gain h fe 120 - 560 v ce =6v, i c =1ma collector to emitter saturation voltage v ce(sat) - - 0.4 v i c =50ma, i b =5ma transition frequency f t - 180 - mhz v ce =12v, i c =2ma, f=100mhz collector output capacitance cob - - 3.5 pf v cb =12v, i e =0, f=1mhz sot-723 ref. millimeter ref. millimeter min. max. min. max. a 1.150 1.250 f 0.170 0.270 b 0.750 0.850 g 0.270 0.370 c - 0.500 h 0 0.050 d 1.150 1.250 i - 0.150 e 0.800typ.
2SC5658 0.15a , 60v npn plastic encapsulated transistor elektronische bauelemente 19-sep-2012 rev.a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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